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INTEGRATED CIRCUITS
SA5211 Transimpedance amplifier (180MHz)
Product specification Replaces datasheet NE/SA5211 of 1995 Apr 26 IC19 Data Handbook 1998 Oct 07
Philips Semiconductors
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
DESCRIPTION
The SA5211 is a 28k transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block.
PIN CONFIGURATION
D Package
GND2 GND2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT (-) GND2 OUT (+) GND1 GND1 GND1 GND1
FEATURES
NC IIN NC VCC1 VCC2
* Extremely low noise: 1.8pA Hz * Single 5V supply * Large bandwidth: 180MHz * Differential outputs * Low input/output impedances * High power supply rejection ratio * 28k differential transresistance
APPLICATIONS
TOP VIEW
SD00318
Figure 1. Pin Configuration
* Fiber optic receivers, analog and digital * Current-to-voltage converters * Wide-band gain block
* Medical and scientific Instrumentation * Sensor preamplifiers * Single-ended to differential conversion * Low noise RF amplifiers * RF signal processing
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Small Outline (SO) Package TEMPERATURE RANGE -40 to +85C ORDER CODE SA5211D DWG # SOT108-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC TA TJ TSTG PD MAX IIN MAX JA Power supply Operating ambient temperature range Operating junction temperature range Storage temperature range Power dissipation, TA=25C (still-air)1 Maximum input current2 Thermal resistance PARAMETER RATING 6 -40 to +85 -55 to +150 -65 to +150 1.0 5 125 UNIT V C C C W mA C/W
NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: JA=125C/W 2. The use of a pull-up resistor to VCC, for the PIN diode is recommended.
1998 Oct 07
2
853-1799 20142
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Ambient temperature range Junction temperature range PARAMETER RATING 4.5 to 5.5 -40 to +85 -40 to +105 UNIT V C C
DC ELECTRICAL CHARACTERISTICS
Min and Max limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data apply at VCC=5V and TA=25C. SYMBOL VIN VO VOS ICC IOMAX IIN IIN MAX PARAMETER Input bias voltage Output bias voltage Output offset voltage Supply current Output sink/source current1 Input current (2% linearity) Maximum input current overload threshold Test Circuit 8, Procedure 2 Test Circuit 8, Procedure 4 20 3 20 30 TEST CONDITIONS Min 0.55 2.7 Typ 0.8 3.4 0 26 4 40 60 Max 1.00 3.7 130 31 UNIT V V mV mA mA A A
NOTES: 1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.
1998 Oct 07
3
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at VCC=5V and TA=25C SYMBOL RT RO RT RO f3dB RIN CIN R/V R/T IN IT PARAMETER Transresistance (differential output) Output resistance (differential output) Transresistance (single-ended output) Output resistance (single-ended output) Bandwidth (-3dB) Input resistance Input capacitance Transresistance power supply sensitivity Transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input) Integrated RMS noise current over the bandwidth (referred to input) CS=01 VCC = 50.5V TA = TA MAX-TA MIN Test Circuit 2 f = 10MHz TA = 25C TA = 25C Test Circuit 2 f = 50MHz f = 100MHz f = 200MHz f = 50MHz CS=1pF ratio2 f = 100MHz f = 200MHz PSRR Power supply rejection (VCC1 = VCC2) DC tested, VCC = 0.1V Equivalent AC Test Circuit 3 DC tested, VCC = 0.1V Equivalent AC Test Circuit 4 DC tested, VCC = 0.1V Equivalent AC Test Circuit 5 f = 0.1MHz Test Circuit 6 RL = Test Circuit 8, Procedure 3 Test Circuit 7 Test Circuit 7 1.7 160 0.8 1.8 23 13 20 35 13 21 41 32 dB nA nA TEST CONDITIONS DC tested RL = Test Circuit 8, Procedure 1 DC tested DC tested RL = DC tested TA = 25C Test circuit 1 10.5 Min 21 Typ 28 30 14 15 180 200 4 3.7 0.025 1.8 18.0 Max 36 UNIT k k MHz pF %/V %/C pA/Hz
PSRR
Power supply rejection ratio2 (VCC1)
23
32
dB
PSRR
Power supply rejection ratio2 (VCC2) Power supply rejection ratio (ECL configuration)2 Maximum differential output voltage swing Maximum input amplitude for output duty cycle of 505%3 Rise time for 50mV output signal4
45
65
dB
PSRR VOMAX VIN MAX tR
23 3.2
dB VP-P mVP-P ns
NOTES: 1. Package parasitic capacitance amounts to about 0.2pF 2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines. 3. Guaranteed by linearity and overload tests. 4. tR defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.
1998 Oct 07
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS
SINGLE-ENDED NETWORK ANALYZER RT [ V OUT V IN R + 2 @ S21 @ R RT + V OUT V IN R + 4 @ S21 @ R DIFFERENTIAL
S-PARAMETER TEST SET PORT 1 5V VCC1 VCC2 33 0.1F ZO = 50 PORT 2
RO [ ZO
1 ) S22 * 33 1 * S22
R O + 2Z O
1 ) S22 * 66 1 * S22
0.1F ZO = 50
OUT R = 1k IN DUT
33 OUT 50 GND1 GND2
0.1F
RL = 50
Test Circuit 1
SPECTRUM ANALYZER
5V VCC1 VCC2 33 AV = 60DB 0.1F ZO = 50
OUT NC IN DUT
33 OUT
0.1F
RL = 50 GND1 GND2
Test Circuit 2 Figure 2. Test Circuits 1 and 2
SD00319
1998 Oct 07
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V 10F 0.1F PORT 1
S-PARAMETER TEST SET PORT 2
10F 0.1F 16
CURRENT PROBE 1mV/mA
CAL
VCC1
VCC2 OUT
33
0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB
IN 33 OUT
UNBAL.
GND1
GND2
Test Circuit 3
NETWORK ANALYZER
5V 10F 0.1F PORT 1
S-PARAMETER TEST SET PORT 2
10F 0.1F 16
CURRENT PROBE 1mV/mA
CAL
5V
10F 0.1F IN
VCC2
VCC1 OUT
33
0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB
UNBAL.
33 OUT GND1 GND2
Test Circuit 4 Figure 3. Test Circuits 3 and 4
SD00320
1998 Oct 07
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
NETWORK ANALYZER
5V 10F 0.1F PORT 1
S-PARAMETER TEST SET PORT 2
10F 0.1F 16
CURRENT PROBE 1mV/mA
CAL
5V
10F 0.1F IN
VCC1
VCC2 OUT
33
0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB
UNBAL.
33 OUT GND1 GND2
Test Circuit 5
NETWORK ANALYZER
S-PARAMETER TEST SET GND PORT 1 PORT 2
10F 0.1F 16
CURRENT PROBE 1mV/mA
CAL
GND1
GND2 OUT
33
0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB
IN 33 OUT 5.2V 10F 0.1F VCC1 VCC2
UNBAL.
Test Circuit 6 Figure 4. Test Circuits 5 and 6
SD00321
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
PULSE GEN.
VCC1
VCC2 33 0.1F A 33 OUT 0.1F ZO = 50 OSCILLOSCOPE B ZO = 50
0.1F 1k IN DUT
OUT
50 GND1 GND2 Measurement done using differential wave forms
Test Circuit 7
SD00322
Figure 5. Test Circuit 7
1998 Oct 07
8
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TEST CIRCUITS (Continued)
Typical Differential Output Voltage vs Current Input 5V
OUT + IN IIN (A) GND1 GND2 DUT OUT -
+ VOUT (V) -
2.00 1.60 DIFFERENTIAL OUTPUT VOLTAGE (V) 1.20 0.80 0.40 0.00 -0.40 -0.80 -1.20 -1.60 -2.00 -100 -80 -60 -40 -20 0 20 40 60 80 100
CURRENT INPUT (A)
NE5211 TEST CONDITIONS Procedure 1 RT measured at 15A RT = (VO1 - VO2)/(+15A - (-15A)) Where: VO1 Measured at IIN = +15A VO2 Measured at IIN = -15A Procedure 2 Linearity = 1 - ABS((VOA - VOB) / (VO3 - VO4)) Where: VO3 Measured at IIN = +30A VO4 Measured at IIN = -30A V + R T @ () 30mA) ) V OA OB V + R T @ (* 30mA) ) V OB OB
Procedure 3
VOMAX = VO7 - VO8 Where: VO7 Measured at IIN = +65A VO8 Measured at IIN = -65A
Procedure 4
IIN Test Pass Conditions: VO7 - VO5 > 20mV and V06 - VO5 > 50mV Where: VO5 Measured at IIN = +40A VO6 Measured at IIN = -400A VO7 Measured at IIN = +65A VO8 Measured at IIN = -65A
Test Circuit 8 Figure 6. Test Circuit 8
SD00331
1998 Oct 07
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS
NE5211 Supply Current vs Temperature
30 TOTAL SUPPLY CURRENT (mA) (ICC1+ I CC2) 28 26 5.0V 24 22 20 3.25 18 -60 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 60 80 100 120 140 4.5V 5.5V OUTPUT BIAS VOLTAGE (V) 3.50 VCC = 5.0V 3.45 PIN 14
NE5211 Output Bias Voltage vs Temperature
2.0 DIFFERENTIAL OUTPUT VOLTAGE (V)
NE5211 Output Voltage vs Input Current
+125C -55C +25C
+85C
3.40
0
3.35
PIN 12
3.30
-55C +25C -2.0 -100.0 +125C +85C 0 INPUT CURRENT (A) +100.0
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
NE5211 Input Bias Voltage vs Temperature
950 900 INPUT BIAS VOLTAGE (mV) 850 800 750 700 650 -60 -40 -20 4.1 3.9 OUTPUT BIAS VOLTAGE (V) 5.5V 3.7 3.5 3.3 3.1 2.9
NE5211 Output Bias Voltage vs Temperature
5.5V DIFFERENTIAL OUTPUT VOLTAGE (V) PIN 14
NE5211 Differential Output Voltage vs Input Current
2.0 5.0V 5.5V
4.5V
5.0V
0
4.5V
4.5V
4.5V
5.0V 5.5V 0 INPUT CURRENT (A) +100.0
0
20 40 60 80 100 120 140
2.7 -60 -40 -20
0
20 40 60 80 100 120 140
-2.0 -100.0
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
NE5211 Output Offset Voltage vs Temperature
40 DIFFERENTIAL OUTPUT SWING (V) 20 OUTPUT OFFSET VOLTAGE (mV) 0 -20 -40 5.0V -60 -80 5.5V 4.5V VOS = VOUT12 - VOUT14 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4
NE5211 Differential Output Swing vs Temperature
DC TESTED RL = OUTPUT VOLTAGE (V) 5.5V 4.5
NE5211 Output Voltage vs Input Current
+125C +85C +125C +25C +25C +85C
-55C
-55C
5.0V
-100 -120 -140 -60 -40 -20 0 20 40 60 80 100 120 140
4.5V
+125C +85C
2.2 -60 -40 -20
0
20 40 60 80 100 120 140
2.5 -100.0
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
-55C +25C 0 +100.0 INPUT CURRENT (A)
SD00332
Figure 7. Typical Performance Characteristics
1998 Oct 07
10
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
NE5211 Gain vs Frequency
17 16 15 GAIN (dB) GAIN (dB) 14 13 12 11 10 9 8 0.1 1 10 FREQUENCY (MHz) 100 PIN 12 TA = 25C RL = 50 5.0V 17 5.5V 16 15 14 13 12 11 10 9 8 0.1
NE5211 Gain vs Frequency
DIFFERENTIAL TRANSRESISTANCE (k ) 5.5V
NE5211 Differential Transresistance vs Temperature
33 DC TESTED 32 31 30 29 28 5.5V 5.0V 4.5V 27 -60 -40 -20 0 20 40 60 80 100 120 140 RL =
5.0V PIN 14 TA = 25C RL = 50
4.5V
4.5V
1 10 FREQUENCY (MHz)
100
AMBIENT TEMPERATURE (C)
NE5211 Gain vs Frequency
17 16 15 GAIN (dB) GAIN (dB) 14 13 12 11 10 9 8 0.1 1 10 FREQUENCY (MHz) 100 PIN 12 VCC = 5V 125C 85C 25C -55C 17 16 15 14 13 12 11 10 9 8 0.1
NE5211 Gain vs Frequency
-55C 60 50 125C PIN 14 VCC = 5V 85C 25C POPULATION (%) 40 30 20 10 1 10 FREQUENCY (MHz) 100 0
NE5211 Typical Bandwidth Distribution (70 Parts from 3 Wafer Lots)
PIN 12 SINGLE-ENDED RL = 50 VCC = 5.0V TA = 25C
143
155 167 179 FREQUENCY (MHz)
191
203
NE5211 Bandwidth vs Temperature
220 200 BANDWIDTH (MHz) 180 160 140 120 100 -60 -40 -20 0 5.5V 5.0V 4.5V PIN 12 SINGLE-ENDED RL = 50 17 16 GAIN (dB) 15 14 13 12 11 10 9 8 0.1
NE5211 Gain and Phase Shift vs Frequency
120 60 PHASE (o) 0 PIN 12 VCC = 5V TA = 25C 1 10 FREQUENCY (MHz) 100 -60 -120 17 16 15 GAIN (dB) 13 12 11 10 9 8 0.1
NE5211 Gain and Phase Shift vs Frequency
120 PIN 14 VCC = 5V TA = 25C
270
1 10 FREQUENCY (MHz)
100
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (C)
SD00333
Figure 8. Typical Performance Characteristics (cont.)
1998 Oct 07
11
PHASE (o)
14
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
NE5211 Output Resistance vs Temperature
18 VCC = 5.0V DC TESTED 18 PIN 12 DC TESTED
NE5211 Output Resistance vs Temperature
19
NE5211 Output Resistance vs Temperature
OUTPUT RESISTANCE ( )
OUTPUT RESISTANCE ( )
16 PIN 14 15 PIN 12 14
16
OUTPUT RESISTANCE ( )
17
17
18
PIN 14 DC TESTED
17 4.5V 5.0V 15 5.5V 14 -60 -40 -20
15
4.5V 5.0V
16
14
5.5V
13 -60 -40 -20
0
20 40 60 80 100 120 140
13 -60 -40 -20
0
20 40 60 80 100 120 140
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
NE5211 Output Resistance vs Frequency
OUTPUT RESISTANCE ( ) OUTPUT RESISTANCE ( ) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 5.5V 4.5V 5.0V PIN 12 TA = 25C 80 70 60 50 40 30 20 10 0 0.1
NE5211 Output Resistance vs Frequency
OUTPUT RESISTANCE ( ) 80 70 60 50 40 30 20 10 0 0.1
NE5211 Output Resistance vs Frequency
VCC = 5.0V
+125C +85C +25C -55C
VCC = 5.0V PIN 12
PIN 14 1 10 100
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
NE5211 Power Supply Rejection Ratio vs Temperature
POWER SUPPLY REJECTION RATIO (dB) 40 38 36 34 32 30 VCC1 = VCC2 = 5.0V VCC = 0.1V DC TESTED OUTPUT REFERRED 10 8 6 DELAY (ns) 4 2 0
NE5211 Group Delay vs Frequency
0.1 20 40 28 -60 -40 -20 0 20 40 60 80 100 120 140
60 80 100 120 140 160 180 200 FREQUENCY (MHz)
AMBIENT TEMPERATURE (C)
SD00335
Figure 9. Typical Performance Characteristics (cont.)
1998 Oct 07
12
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Output Step Response
VCC = 5V TA = 25C 20mV/Div
0
2
4
6
8
10 (ns)
12
14
16
18
20
SD00334
Figure 10. Typical Performance Characteristics (cont.)
THEORY OF OPERATION
Transimpedance amplifiers have been widely used as the preamplifier in fiber-optic receivers. The SA5211 is a wide bandwidth (typically 180MHz) transimpedance amplifier designed primarily for input currents requiring a large dynamic range, such as those produced by a laser diode. The maximum input current before output stage clipping occurs at typically 50A. The SA5211 is a bipolar transimpedance amplifier which is current driven at the input and generates a differential voltage signal at the outputs. The forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms. The main feature of this amplifier is a wideband, low-noise input stage which is desensitized to photodiode capacitance variations. When connected to a photodiode of a few picoFarads, the frequency response will not be degraded significantly. Except for the input stage, the entire signal path is differential to provide improved power-supply rejection and ease of interface to ECL type circuitry. A block diagram of the circuit is shown in Figure 11. The input stage (A1) employs shunt-series feedback to stabilize the current gain of the amplifier. The transresistance of the amplifier from the current source to the emitter of Q3 is approximately the value of the feedback resistor, RF=14.4k. The gain from the second stage (A2) and emitter followers (A3 and A4) is about two. Therefore, the differential transresistance of the entire amplifier, RT is RT V (diff) + OUT + 2R F + 2(14.4K) + 28.8kW I IN
Q11 - Q12 are bonded to an external pin, VCC2, in order to reduce the feedback to the input stage. The output impedance is about 17 single-ended. For ease of performance evaluation, a 33 resistor is used in series with each output to match to a 50 test system.
BANDWIDTH CALCULATIONS
The input stage, shown in Figure 13, employs shunt-series feedback to stabilize the current gain of the amplifier. A simplified analysis can determine the performance of the amplifier. The equivalent input capacitance, CIN, in parallel with the source, IS, is approximately 7.5pF, assuming that CS=0 where CS is the external source capacitance. Since the input is driven by a current source the input must have a low input resistance. The input resistance, RIN, is the ratio of the incremental input voltage, VIN, to the corresponding input current, IIN and can be calculated as: V RF R IN + IN + + 14.4K + 203W 71 I IN 1 ) A VOL More exact calculations would yield a higher value of 200. Thus CIN and RIN will form the dominant pole of the entire amplifier; f *3dB + 1 2p R IN C IN
Assuming typical values for RF = 14.4k, RIN = 200, CIN = 4pF f *3dB + 1 + 200MHz 2p 4pF 200W
The single-ended transresistance of the amplifier is typically 14.4k. The simplified schematic in Figure 12 shows how an input current is converted to a differential output voltage. The amplifier has a single input for current which is referenced to Ground 1. An input current from a laser diode, for example, will be converted into a voltage by the feedback resistor RF. The transistor Q1 provides most of the open loop gain of the circuit, AVOL70. The emitter follower Q2 minimizes loading on Q1. The transistor Q4, resistor R7, and VB1 provide level shifting and interface with the Q15 - Q16 differential pair of the second stage which is biased with an internal reference, VB2. The differential outputs are derived from emitter followers Q11 - Q12 which are biased by constant current sources. The collectors of
The operating point of Q1, Figure 12, has been optimized for the lowest current noise without introducing a second dominant pole in the pass-band. All poles associated with subsequent stages have been kept at sufficiently high enough frequencies to yield an overall single pole response. Although wider bandwidths have been achieved by using a cascade input stage configuration, the present solution has the advantage of a very uniform, highly desensitized frequency response because the Miller effect dominates over the external photodiode and stray capacitances. For example, assuming a source capacitance of 1pF, input stage voltage gain of 70, RIN =
1998 Oct 07
13
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
60 then the total input capacitance, CIN = 4 pF which will lead to only a 12% bandwidth reduction.
Assuming a data rate of 400 Mbaud (Bandwidth, B=200MHz), the noise parameter Z may be calculated as:1 Z+ I EQ 41 @ 10 *9 + + 1281 qB (1.6 @ 10 *19)(200 @ 10 6)
NOISE
Most of the currently installed fiber-optic systems use non-coherent transmission and detect incident optical power. Therefore, receiver noise performance becomes very important. The input stage achieves a low input referred noise current (spectral density) of 2.9pA/Hz. The transresistance configuration assures that the external high value bias resistors often required for photodiode biasing will not contribute to the total noise system noise. The equivalent input RMS noise current is strongly determined by the quiescent current of Q1, the feedback resistor RF, and the bandwidth; however, it is not dependent upon the internal Miller-capacitance. The measured wideband noise was 41nA RMS in a 200MHz bandwidth.
where Z is the ratio of RMS noise output to the peak response to a single hole-electron pair. Assuming 100% photodetector quantum efficiency, half mark/half space digital transmission, 850nm lightwave and using Gaussian approximation, the minimum required optical power to achieve 10-9 BER is: P avMIN + 12 hc B Z + 12 @ 2.3 @ 10 *19 l 200 @ 10 6 (1281) + 719nW + * 31.5dBm + 1139nW + * 29.4dBm
DYNAMIC RANGE CALCULATIONS
The electrical dynamic range can be defined as the ratio of maximum input current to the peak noise current: Electrical dynamic range, DE, in a 200MHz bandwidth assuming IINMAX = 60A and a wideband noise of IEQ=41nARMS for an external source capacitance of CS = 1pF. DE + (Max. input current) (Peak noise current) (60 @ 10 *6) ( 2 41 10 *9)
where h is Planck's Constant, c is the speed of light, is the wavelength. The minimum input current to the SA5211, at this input power is: I avMIN + qP avMIN l hc 1 @ Joule @ q + I Joule sec
*9 *19 + 707 @ 10 @ 1.6 @ 10 2.3 @ 10 *19 = 500nA
D E(dB) + 20 log
Choosing the maximum peak overload current of IavMAX=60A, the maximum mean optical power is: P avMAX + hcI avMAX *19 + 2.3 @ 10 *19 60 @ 10mA lq 1.6 @ 10
(60mA) D E(dB) + 20 log + 60dB (58nA) In order to calculate the optical dynamic range the incident optical power must be considered. For a given wavelength ; Energy of one Photon = hc watt sec (Joule) l Where h=Planck's Constant = 6.6 x 10-34 Joule sec. c = speed of light = 3 x 108 m/sec c / = optical frequency P No. of incident photons/sec= hs where P=optical incident power l P No. of generated electrons/sec = h @ hs l where = quantum efficiency + no. of generated electron hole paris no. of incident photons P NI + h @ hs @ e Amps (Coulombs sec.) l where e = electron charge = 1.6 x h@e Responsivity R = hs Amp/watt l I + P@R 1998 Oct 07 14 10-19 Coulombs
+ 86mW or * 10.6dBm (optical) Thus the optical dynamic range, DO is: DO = PavMAX - PavMIN = -4.6 -(-29.4) = 24.8dB. D O + P avMAX * P avMIN + * 31.5 * (* 10.6) + 20.8dB
1. S.D. Personick, Optical Fiber Transmission Systems, Plenum Press, NY, 1981, Chapter 3.
OUTPUT + A3
INPUT A1 A2
RF
A4 OUTPUT -
SD00327
Figure 11. SA5211 - Block Diagram This represents the maximum limit attainable with the SA5211 operating at 200MHz bandwidth, with a half mark/half space digital transmission at 850nm wavelength.
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
VCC1 VCC2 R1 Q2 Q1 R2 GND1 PHOTODIODE R5 R4 GND2 R7 VB2 Q3 R3 Q4 + Q15 R14 Q16 R15 + OUT+ R12 R13 Q11 Q12 OUT-
INPUT
SD00328
Figure 12. Transimpedance Amplifier
VCC R1 INPUT IIN IB Q1 R2 VIN IF VEQ3 IC1 Q2 Q3 R3
RF R4
Pins 8-11, and Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane stripe also provides isolation between the output return currents flowing to either VCC2 or Ground 2 and the input photodiode currents to flowing to Ground 1. Without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800MHz. The easiest way to realize that the part is not functioning normally is to measure the DC voltages at the outputs. If they are not close to their quiescent values of 3.3V (for a 5V supply), then the circuit may be oscillating. Input pin layout necessitates that the photodiode be physically very close to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. As with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. The first of these is the use of a well-regulated power supply. The supply must be capable of providing varying amounts of current without significantly changing the voltage level. Proper supply bypassing requires that a good quality 0.1F high-frequency capacitor be inserted between VCC1 and VCC2, preferably a chip capacitor, as close to the package pins as possible. Also, the parallel combination of 0.1F capacitors with 10F tantalum capacitors from each supply, VCC1 and VCC2, to the ground plane should provide adequate decoupling. Some applications may require an RF choke in series with the power supply line. Separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. Figure 14 depicts a 50Mb/s TTL fiber-optic receiver using the BPF31, 850nm LED, the SA5211 and the SA5214 post amplifier.
SD00329
Figure 13. Shunt-Series Input Stage
APPLICATION INFORMATION
Package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. Since the SA5211 has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. Constructing the board layout so that Ground 1 and Ground 2 have very low impedance paths has produced the best results. This was accomplished by adding a ground-plane stripe underneath the device connecting Ground 1,
1998 Oct 07
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Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
+VCC 47F C1 C2 .01F
GND
R2 220 C9
D1 LED 1 2 100pF 3 4 R3 47k 5 6 7 8 9 LED CPKDET THRESH GNDA FLAG JAM VCCD VCCA GNDD TTLOUT IN1B IN1A 20
C7 100pF 19 C8 10 0.1F 11 12 13 14 8 9 GND GND GND GND VCC VCC NC 7 6 5 4 3 2 1
L1 10H
R1 100
C5 1.0F
C4 .01F
C3 10F
.01F
NE5210
CAZP 18 CAZN 17
C6
IIN NC GND GND
OUT1B 16
OUT GND OUT
L2 10H C11 .01F
NE5214
BPF31 OPTICAL INPUT
IN8B OUT1A IN8A RHYST
15 14 13 12
C10 10F
L3 10H
C12 10F
C13 .01F
10
RPKDET 11
R4 4k VOUT (TTL)
NOTE: The NE5210/NE5217 combination can operate at data rates in excess of 100Mb/s NRZ The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC-50MHz band, but does create extra high frequency noise on the NE5210 VCC pin(s).
SD00330
Figure 14. A 50Mb/s Fiber Optic Receiver
1998 Oct 07
16
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
1 GND 2
14 OUT (-)
2
13 GND 2
GND 2
3
12
OUT (+) NC
INPUT
4
11
GND 1
NC 5
10
GND 1
VCC1 6 9
GND 1
ECN No.: 06027 1992 Mar 13 VCC 2 7 8 GND 1
SD00488
Figure 15. SA5211 Bonding Diagram
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales.
1998 Oct 07
17
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
1998 Oct 07
18
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
NOTES
1998 Oct 07
19
Philips Semiconductors
Product specification
Transimpedance amplifier (180MHz)
SA5211
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Date of release: 10-98 Document order number: 9397 750 04624
Philips Semiconductors
1998 Oct 07 20

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